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 Ordering number : ENA0198
SB20015M
SANYO Semiconductors
DATA SHEET
SB20015M
Applications
*
Low IR Schottky Barrier Diode
15V, 2.0A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
* * *
Small switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm).
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Mounted on a ceramic board (500mm2!0.8mm) 50Hz sine wave, 1 cycle Conditions Ratings 15 17 2.0 10 --55 to +125 --55 to +125 Unit V V A A C C
Electrical Characteristics at Ta=25C
Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth(j-a) IR=0.2mA IF=2.0A VR=7.5V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (500mm2!0.8mm) Conditions Ratings min 15 0.55 6 27 10 70 typ max Unit V V A pF ns C / W
Marking : SN
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 32406SB MS IM TB-00002129 No. A0198-1/3
SB20015M
Package Dimensions unit : mm 7019A-001
2.0 0.25 0.15
Electrical Connection
3
3
2.1 1.6 0 to 0.02
1 : Anode 2 : No Contact 3 : Cathode
Top view
1 2
1
0.25 0.65
2
0.3
0.85
0.07
1 : Anode 2 : No Contact 3 : Cathode SANYO : MCPH3
trr Test Circuit
Duty10%
100mA 100mA
50 10s
100
10
--5V trr
10mA
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.1 0.2
IF -- VF
10000
IR -- VR
Ta=125C
1000
Reverse Current, IR -- A
Forward Current, IF -- A
100C
100
75C
10
50C
25C
1.0
0.1
0C
25 100 C C 75C 50 C 25C 0C --25C
Ta= 1
0.01 0.001
--25C
0 2 4 6 8 10 12 14 16
0.3
0.4
0.5
0.6
0.7 IT10276
Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 360
Average Reverse Power Dissipation, PR(AV) -- mW
PF(AV) -- IO
(1)
Reverse Voltage, VR -- V
0.025
IT10277
PR(AV) -- VRM
Rectangular wave (2) (4) (3)
0.020
Sine wave
180 360
(1)Rectangular wave =300 (2)Rectangular wave =240 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave
VR 360
(1) (2) (3)
0.015
0.010
Sine wave
VR 180
(1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180
0.5 1.0 1.5 2.0 2.5 IT10432
0.005
360
(4)
0 0 2 4 6 8 10 12 14 16
Average Output Current, IO -- A
Peak Reverse Voltage, VRM -- V
IT10433
No. A0198-2/3
SB20015M
140
Tc -- IO
Interterminal Capacitance, C -- pF
120
Case Temperature, Tc -- C
(1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180
*Mounted on a ceramic board (500mm2!0.8mm), Rth(j-a)=68C/W
5 3 2
C -- VR
100
80
100 7 5 3 2
60
Rectangular wave
(4)
360
40
(1)
(2)
(3)
20 0 0
Sine wave
180 360 0.5 1.0 1.5 2.0 2.5 IT10434
10 0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
Average Output Current, IO -- A
14
IFSM -- t
Current waveform 50Hz sine wave IS 20ms t
Reverse Voltage, VR -- V
IT10275
Surge Forward Current, IFSM(Peak) -- A
12
10
8
6
4
2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Time, t -- s
ID00435
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice.
PS No. A0198-3/3


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